ELECTRICAL-RESISTANCE OF AN ELASTICALLY BENT THIN METAL WIRE IN A MAGNETIC-FIELD

被引:2
作者
COOK, JW [1 ]
SKOVE, MJ [1 ]
STILLWELL, EP [1 ]
机构
[1] CLEMSON UNIV,DEPT PHYS,CLEMSON,SC 29631
来源
PHYSICAL REVIEW B | 1979年 / 20卷 / 12期
关键词
D O I
10.1103/PhysRevB.20.5100
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
If the mean free path of charge carriers is sufficiently large compared to sample dimensions, the resistance of a straight wire increases as it is elastically bent. We have studied this effect in Bi, Sn, and Zn in the presence of a magnetic field and find that for magnetic fields perpendicular to the plane containing the bent sample, the resistance is not changed by reversal of sample current or magnetic-field direction. These results are discussed in connection with a classical theoretical model of charge carriers which predicts that such a change would occur. As the magnetic field is increased the bending effect decreases and at sufficiently large fields it vanishes. This result reinforces our interpretation that the bending effect is caused by enhanced surface scattering due to the change in sample geometry. © 1979 The American Physical Society.
引用
收藏
页码:5100 / 5103
页数:4
相关论文
共 5 条
[1]   CYCLOTRON RESONANCE IN BISMUTH .2. [J].
AUBREY, JE .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :321-330
[2]  
Berger J., 1977, Collective Phenomena, V2, P171
[3]  
HUANG K, 1963, STATISTICAL MECHANIC, P237
[4]   EFFECT OF ELASTIC STRESS ON SOME ELECTRONIC PROPERTIES OF INDIUM [J].
OVERCASH, DR ;
SKOVE, MJ ;
STILLWELL, EP .
PHYSICAL REVIEW, 1969, 187 (02) :570-+
[5]   MEASUREMENT OF ELECTRON MEAN FREE PATH USING A BENDING EFFECT [J].
STILLWELL, EP ;
SKOVE, MJ ;
OVERCASH, DR ;
GETTYS, WB .
PHYSIK DER KONDENSITERTEN MATERIE, 1969, 9 (1-2) :183-+