660-NM IN0.5GA0.5P LIGHT-EMITTING-DIODES ON SI SUBSTRATES

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N) [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4543 - 4553

[3] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1271 - 1273

[4] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1608 - 1610

[5] ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1617 - 1619

[6] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1572 - 1573

[7] ITOH Y, 1987, INT PVSEC 3 TOKYO, P763

[8] GROWTH OF INP AND INGAAS BY MO-CHLORIDE VPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09): : L770 - L772

[9] NEW HYDRIDE VAPOR-PHASE EPITAXY FOR GAP GROWTH ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1245 - 1247

[10] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1141 - L1143

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N) [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4543 - 4553

[3] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1271 - 1273

[4] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1608 - 1610

[5] ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1617 - 1619

[6] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1572 - 1573

[7] ITOH Y, 1987, INT PVSEC 3 TOKYO, P763

[8] GROWTH OF INP AND INGAAS BY MO-CHLORIDE VPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09): : L770 - L772

[9] NEW HYDRIDE VAPOR-PHASE EPITAXY FOR GAP GROWTH ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1245 - 1247

[10] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1141 - L1143