660-NM IN0.5GA0.5P LIGHT-EMITTING-DIODES ON SI SUBSTRATES

被引：14

作者：

KONDO, S

MATSUMOTO, S

NAGAI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.100150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：279 / 281

页数：3

共 10 条

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AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

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[2] BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N) [J].

CAMPBELL, JC ;

HOLONYAK, N ;

CRAFORD, MG ;

KEUNE, DL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4543-4553

[3] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI [J].

DEPPE, DG ;

NAM, DW ;

HOLONYAK, N ;

HSIEH, KC ;

MATYI, RJ ;

SHICHIJO, H ;

EPLER, JE ;

CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 51 (16) :1271-1273

[4] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J].

ELMASRY, N ;

TARN, JCL ;

HUMPHREYS, TP ;

HAMAGUCHI, N ;

KARAM, NH ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1608-1610

[5] ALGAAS HETEROJUNCTION VISIBLE (700 NM) LIGHT-EMITTING-DIODES ON SI SUBSTRATES FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HASHIMOTO, A ;

KAWARADA, Y ;

KAMIJOH, T ;

AKIYAMA, M ;

WATANABE, N ;

SAKUTA, M .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1617-1619

[6] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J].

IKEDA, M ;

SATO, H ;

OHATA, T ;

NAKANO, K ;

TODA, A ;

KUMAGAI, O ;

KOJIMA, C .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1572-1573

[7]

ITOH Y, 1987, INT PVSEC 3 TOKYO, P763

[8] GROWTH OF INP AND INGAAS BY MO-CHLORIDE VPE [J].

KONDO, S ;

AMANO, T ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09) :L770-L772

[9] NEW HYDRIDE VAPOR-PHASE EPITAXY FOR GAP GROWTH ON SI [J].

MORI, H ;

OGASAWARA, M ;

YAMAMOTO, M ;

TACHIKAWA, M .

APPLIED PHYSICS LETTERS, 1987, 51 (16) :1245-1247

[10] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y [J].

NISHIMURA, T ;

MIZUGUCHI, K ;

HAYAFUJI, N ;

MUROTANI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1141-L1143

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