RELAXATION-OSCILLATION-INDUCED CHAOTIC INSTABILITIES IN MODULATED EXTERNAL-CAVITY SEMICONDUCTOR-LASERS

被引：4
作者：
LAM, BC
SUSHCHIK, MM
ABARBANEL, HDI
机构：
[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN MS0407,LA JOLLA,CA 92093
[2] UNIV CALIF SAN DIEGO,INST NONLINEAR SCI,LA JOLLA,CA 92093
[3] UNIV CALIF SAN DIEGO,DEPT PHYS,LA JOLLA,CA 92093
[4] UNIV CALIF SAN DIEGO,SCRIPPS INST OCEANOG,LA JOLLA,CA 92093
来源：
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1995年 / 12卷 / 06期
关键词：
D O I：
10.1364/JOSAB.12.001150
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We theoretically examine the consequences of modulating an external-cavity semiconductor laser around its mode-locking resonant frequency. When the modulation frequency is below resonance, the laser exhibits a three-frequency route to chaos. When the modulation frequency is above resonance, the laser oscillates in two- and three-frequency states. The chaotic instability is a result of the nonlinear interaction of three periodic modes of the laser system. These modes are dynamical manifestations of the composite cavity mode-locking resonance, the applied field that is due to the modulation, and the laser relaxation oscillation.
引用
收藏
页码：1150 / 1156
页数：7
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