HIGH-LOW JUNCTIONS FOR SOLAR-CELL APPLICATIONS

被引:45
作者
DELALAMO, J [1 ]
VANMEERBERGEN, J [1 ]
DHOORE, F [1 ]
NIJS, J [1 ]
机构
[1] CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECHN,ESAT LAB,B-3030 HEVERLE,BELGIUM
关键词
D O I
10.1016/0038-1101(81)90072-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:533 / 538
页数:6
相关论文
共 26 条
[1]   PROPERTIES OF SILICON AND GERMANIUM .2. [J].
CONWELL, EM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300
[2]  
Davis E.M., 1958, J ELECTRON CONTR, V4, P17
[4]  
Fossum J. G., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1294
[5]   PHYSICAL OPERATION OF BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].
FOSSUM, JG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :322-325
[6]   COMPUTER-AIDED NUMERICAL-ANALYSIS OF SILICON SOLAR CELLS [J].
FOSSUM, JG .
SOLID-STATE ELECTRONICS, 1976, 19 (04) :269-277
[7]   HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].
FOSSUM, JG ;
BURGESS, EL .
APPLIED PHYSICS LETTERS, 1978, 33 (03) :238-240
[8]  
GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40
[9]   PERFORMANCE LIMITATIONS OF SILICON SOLAR-CELLS [J].
HAUSER, JR ;
DUNBAR, PM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :305-321
[10]   MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J].
HAUSER, JR ;
DUNBAR, PM .
SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :715-716