Properties of Hg1-xCdxTe grown on CdZnTe and Si substrate

被引：0
|
作者：
Sivananthan, S [1 ]
Chen, YP [1 ]
Wijewarnasuriya, PS [1 ]
Faurie, JP [1 ]
Smith, FT [1 ]
Norton, PW [1 ]
机构：
[1] LORAL INFRARED & IMAGING SYST,LEXINGTON,MA 02173
来源：
NARROW GAP SEMICONDUCTORS 1995 | 1995年 / 144期
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D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present the properties of HgCdTe grown on CdZnTe and Si substrates. HgCdTe layers grown on CdZnTe substrates by MBE exhibit excellent Hall characteristics down to doping levels of 2x10(15) cm(-3). Electron mobilities ranging from (2-3)x10(5) cm(2)/vs at 23K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below a 2x10(15) cm(-3) doping level, minority carrier lifetime is limited by Schockley Reed recombination. Single domain, twin free CdTe(111)B epitaxial layers on Si substrates are currently routinely grown by MBE with an x -ray DCRC FWHM as low as 96 are sec. The electrical characteristics and dislocation density of HgCdTe grown by MBE on (111)B CdTe/(100)Si are comparable to those grown on bulk (111)B CdTe. HgCdTe layers grown by LPE on CdTe/Si have EPD as low as 5.3x10(5) cm(-2).
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页码：239 / 244
页数：6
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