DEEP TRAP STATES IN SI3N4 LAYER ON SI SUBSTRATE

被引：24
作者：
FUJITA, S
NISHIHARA, M
HOI, WL
SASAKI, A
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期
关键词：
D O I：
10.1143/JJAP.20.917
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：917 / 923
页数：7
相关论文
共 12 条
[1]   IMPROVED MODEL FOR CHARGING CHARACTERISTICS OF A DUAL-DIELECTRIC (MNOS) NON-VOLATILE MEMORY DEVICE [J].
BEGUWALA, MME ;
GUNCKEL, TL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :1023-1030
[2]   INFLUENCE OF NITRIDE THICKNESS VARIATIONS ON SWITCHING SPEED OF MNOS MEMORY TRANSISTORS [J].
BRUUN, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1328-1331
[3]  
Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109
[4]   TIME-DEPENDENCE OF CHARGE TRANSPORT IN MIS MEMORY TRANSISTORS [J].
FERRISPRABHU, AV .
APPLIED PHYSICS LETTERS, 1972, 20 (04) :149-+
[5]  
FUJITA S, 1980, ED8065 IECE GROUP EL
[6]   MEMORY TRAPS IN MNOS DIODES MEASURED BY THERMALLY STIMULATED CURRENT [J].
KATSUBE, T ;
ADACHI, Y ;
IKOMA, T .
SOLID-STATE ELECTRONICS, 1976, 19 (01) :11-16
[7]   LOW-FIELD TRANSIENT-BEHAVIOR OF MNOS DEVICES [J].
MAES, HE ;
VANOVERSTRAETEN, RJ .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :664-666
[8]   EFFECTS OF NITRIDE DEPOSITION CONDITIONS ON CHARACTERISTICS OF AN MNOS NON-VOLATILE MEMORY TRANSISTOR [J].
NAKAYAMA, H ;
ENOMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1773-1779
[9]  
Pulver M., 1970, Physica Status Solidi A, V1, P65, DOI 10.1002/pssa.19700010108
[10]  
ROSS EC, 1969, RCA REV, V30, P366
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