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CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON
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PHYSICAL REVIEW,
1957, 108 (06)
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[2]
EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON
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BELL SYSTEM TECHNICAL JOURNAL,
1958, 37 (03)
:699-710
[4]
DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS INTO GERMANIUM
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PHYSICAL REVIEW,
1952, 86 (01)
:136-137
[6]
THE POTENTIALS OF INFINITE SYSTEMS OF SOURCES AND NUMERICAL SOLUTIONS OF PROBLEMS IN SEMICONDUCTOR ENGINEERING
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BELL SYSTEM TECHNICAL JOURNAL,
1955, 34 (01)
:105-128