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CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD
被引:26
作者
:
MCMAHON, RA
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
MCMAHON, RA
[
1
]
AHMED, H
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
AHMED, H
[
1
]
DOBSON, RM
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
DOBSON, RM
[
1
]
SPEIGHT, JD
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
SPEIGHT, JD
[
1
]
机构
:
[1]
PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND
来源
:
ELECTRONICS LETTERS
|
1980年
/ 16卷
/ 08期
关键词
:
D O I
:
10.1049/el:19800215
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:295 / 297
页数:3
相关论文
共 6 条
[1]
STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON
[J].
GAT, A
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford
GAT, A
;
LIETOILA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford
LIETOILA, A
;
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford
GIBBONS, JF
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(04)
:2926
-2929
[2]
PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE
[J].
GREENWALD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
GREENWALD, AC
;
KIRKPATRICK, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
KIRKPATRICK, AR
;
LITTLE, RG
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
LITTLE, RG
;
MINNUCCI, JA
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
MINNUCCI, JA
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:783
-787
[3]
ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
[J].
MCMAHON, RA
论文数:
0
引用数:
0
h-index:
0
机构:
Engineering Department, Cambridge University, Cambridge, Trumpington Street
MCMAHON, RA
;
AHMED, H
论文数:
0
引用数:
0
h-index:
0
机构:
Engineering Department, Cambridge University, Cambridge, Trumpington Street
AHMED, H
.
ELECTRONICS LETTERS,
1979,
15
(02)
:45
-47
[4]
MCMAHON RA, 156TH M EL SOC LOS A
[5]
MILLER, 1978, SEMICONDUCTOR CHARAC
[6]
ELECTROCHEMICAL CARRIER CONCENTRATION PROFILING IN SILICON
[J].
SHARPE, CD
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
SHARPE, CD
;
LILLEY, P
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
LILLEY, P
;
ELLIOTT, CR
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
ELLIOTT, CR
;
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
AMBRIDGE, T
.
ELECTRONICS LETTERS,
1979,
15
(20)
:622
-624
←
1
→
共 6 条
[1]
STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON
[J].
GAT, A
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford
GAT, A
;
LIETOILA, A
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford
LIETOILA, A
;
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Electronics Laboratories, Stanford
GIBBONS, JF
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(04)
:2926
-2929
[2]
PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE
[J].
GREENWALD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
GREENWALD, AC
;
KIRKPATRICK, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
KIRKPATRICK, AR
;
LITTLE, RG
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
LITTLE, RG
;
MINNUCCI, JA
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
MINNUCCI, JA
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:783
-787
[3]
ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
[J].
MCMAHON, RA
论文数:
0
引用数:
0
h-index:
0
机构:
Engineering Department, Cambridge University, Cambridge, Trumpington Street
MCMAHON, RA
;
AHMED, H
论文数:
0
引用数:
0
h-index:
0
机构:
Engineering Department, Cambridge University, Cambridge, Trumpington Street
AHMED, H
.
ELECTRONICS LETTERS,
1979,
15
(02)
:45
-47
[4]
MCMAHON RA, 156TH M EL SOC LOS A
[5]
MILLER, 1978, SEMICONDUCTOR CHARAC
[6]
ELECTROCHEMICAL CARRIER CONCENTRATION PROFILING IN SILICON
[J].
SHARPE, CD
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
SHARPE, CD
;
LILLEY, P
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
LILLEY, P
;
ELLIOTT, CR
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
ELLIOTT, CR
;
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
POST OFF RES CTR,IPSWICH IP5 7RE,ENGLAND
AMBRIDGE, T
.
ELECTRONICS LETTERS,
1979,
15
(20)
:622
-624
←
1
→