RESONANT AND NONRESONANT TUNNELING IN GAAS/ALXGA1-X AS ASYMMETRIC DOUBLE QUANTUM-WELLS

被引：8

作者：

ALEXANDER, MGW ^{[1
]}

NIDO, M ^{[1
]}

RUHLE, WW ^{[1
]}

KOHLER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 01期

关键词：

D O I：

10.1016/0749-6036(91)90097-B

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron and hole tunneling transfer processes in asymmetric double quantum well structures are investigated by time-resolved picosecond photoluminescence. Change from nonresonant to resonant tunneling is achieved with a perpendicular electric field. Electron transfer times become considerably faster in the resonant regime, but the transfer times still decrease strongly with barrier thickness. The resonances shift to higher bias values for increasing excitation densities. Nonresonant hole tunneling with fast transfer times occurs without the contributions of optical phonons. Resonances in the hole tunneling transfer times seem to result from mixing effects between heavy and light holes in adjacent wells. © 1991.

引用

页码：83 / 86

页数：4

共 13 条

[1] GAMMA-BAND AND X-BAND CONTRIBUTIONS TO NONRESONANT TUNNELING IN GAAS/AL0.35GA0.65AS DOUBLE QUANTUM WELLS [J].

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[2] TIME-RESOLVED MEASUREMENTS OF TUNNELING BETWEEN DOUBLE QUANTUM WELLS IN IN0.53GA0.47AS/INP [J].

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[8] NONRESONANT ELECTRON AND HOLE TUNNELING TIMES IN GAAS/AL0.35GA0.65AS ASYMMETRIC DOUBLE QUANTUM WELLS [J].

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[9]

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