LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION

被引：36
|
作者：
LEARN, AJ
HAQ, KE
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 01期
关键词：
D O I：
10.1063/1.1653238
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：26 / &
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