NEAR-SURFACE ELECTRICAL EFFECTS OF OXIDATION AND HYDROGENATION IN SILICON

被引：7
|
作者：
DELIDAIS, I
BALLUTAUD, D
BOUTRYFORVEILLE, A
MAURICE, JL
AUCOUTURIER, M
LEROY, B
机构：
[1] CNRS,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE
[2] CNRS,ELECTR INTERFACIALE,F-92195 MEUDON,FRANCE
[3] IBM CORP,F-91102 CORBEIL ESSONNES,FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期
关键词：
D O I：
10.1016/0921-5107(89)90257-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：277 / 280
页数：4
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