THE PHYSICS OF HOT-ELECTRON DEGRADATION OF SI MOSFETS - CAN WE UNDERSTAND IT

被引：33
作者：
FISCHETTI, MV
LAUX, SE
DIMARIA, DJ
机构：
来源：
APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(89)90473-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：578 / 596
页数：19
相关论文
共 45 条
[1]   AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON [J].
BACCARANI, G ;
WORDEMAN, MR .
SOLID-STATE ELECTRONICS, 1985, 28 (04) :407-416
[2]   MONTE-CARLO CALCULATION OF HOT-ELECTRON DRIFT VELOCITY IN SILICON (100) INVERSION LAYER BY INCLUDING 3 SUB-BANDS [J].
BASU, PK .
SOLID STATE COMMUNICATIONS, 1978, 27 (06) :657-660
[3]  
BLOTEKJAER K, 1938, IEEE T ELECTRON DEV, V17, P17
[4]  
COHEN ML, 1966, PHYS REV, V141, P786
[5]   HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J].
COTTRELL, PE ;
TROUTMAN, RR ;
NING, TH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :520-533
[6]   VACUUM EMISSION OF HOT-ELECTRONS FROM SILICON DIOXIDE AT LOW-TEMPERATURES [J].
DIMARIA, DJ ;
FISCHETTI, MV .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4683-4691
[7]   TRAP CREATION IN SILICON DIOXIDE PRODUCED BY HOT-ELECTRONS [J].
DIMARIA, DJ ;
STASIAK, JW .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2342-2356
[8]  
DIMARIA DJ, 1987, APPL PHYS LETT, V51, P665
[9]  
ECONOMOU EN, 1969, PHYS REV, V182, P538
[10]   HOT-ELECTRON INJECTION INTO THE OXIDE IN N-CHANNEL MOS DEVICES [J].
EITAN, B ;
FROHMANBENTCHKOWSKY, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) :328-340
12345