PHOTOENHANCED DEPOSITION OF SILICON-OXIDE THIN-FILMS USING A NOVEL WINDOWLESS INTERNAL NITROGEN DISCHARGE LAMP

被引：6
|
作者：
BAKER, SD
MILNE, WI
ROBERTSON, PA
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 04期
关键词：
D O I：
10.1007/BF01210343
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：243 / 248
页数：6
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