CHARACTERIZATION OF DAMAGED LAYER USING AC SURFACE PHOTOVOLTAGE IN SILICON-WAFERS

被引：1
作者：
SHIMIZU, H [1 ]
MUNAKATA, C [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期
关键词：
SILICON WAFER; DAMAGED LAYER; ALUMINUM; RCA RINSE; AC SURFACE PHOTOVOLTAGE; SCANNING PHOTON MICROSCOPE;
D O I：
10.1143/JJAP.32.3780
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AC surface photovoltage (SPV) responds to damaged layers in n-type silicon (Si) wafers with depleted or inverted surfaces. Excited carriers recombine at broken bonds in a damaged layer, and the ac SPV is then reduced depending on whether slight or heavy damage exists at the Si surface. The ac SPV is related to the thermally modulated reflectance signal and, thus, is qualitatively applicable to nondestructive evaluation of the damaged layer.
引用
收藏
页码：3780 / 3781
页数：2
相关论文
共 30 条
  • [21] Surface integrity and removal mechanism of chemical mechanical grinding of silicon wafers using a newly developed wheel
    Dong, Zhigang
    Gao, Shang
    Huang, Han
    Kang, Renke
    Wang, Ziguang
    [J]. INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2016, 83 (5-8) : 1231 - 1239
  • [22] Surface Profiling of Silicon Wafers Using Harmonic Phase-Iterative Analysis and Wavelength-Tuning Interferometry
    Kim, Sungtae
    Kim, Yangjin
    [J]. TRANSACTIONS OF THE KOREAN SOCIETY OF MECHANICAL ENGINEERS A, 2022, 46 (06) : 619 - 628
  • [23] Nanosecond Laser Processing for Improving the Surface Characteristics of Silicon Wafers Cut Using Wire Electrical Discharge Machining
    Panchal N.
    Narayanan V.
    Marla D.
    [J]. Lasers in Manufacturing and Materials Processing, 2021, 8 (02) : 183 - 200
  • [24] A synchronous microsystem process using a dual-cylinder tool for the surface microstructures from solar cell silicon wafers
    Pa, P. S.
    [J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2011, 17 (09): : 1463 - 1470
  • [25] A synchronous microsystem process using a dual-cylinder tool for the surface microstructures from solar cell silicon wafers
    P. S. Pa
    [J]. Microsystem Technologies, 2011, 17 : 1463 - 1470
  • [26] Depth Measurement of Disrupted Layer on Silicon Wafer Surface using Auger Spectroscopy Method
    Solodukha, V. A.
    Beloys, A. I.
    Chyhir, G. G.
    [J]. SCIENCE & TECHNIQUE, 2016, 15 (04): : 329 - 334
  • [27] Surface integrity and removal mechanism of silicon wafers in chemo-mechanical grinding using a newly developed soft abrasive grinding wheel
    Gao, Shang
    Huang, Han
    Zhu, Xianglong
    Kang, Renke
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 63 : 97 - 106
  • [28] Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon
    Moumni, Besma
    Ben Jaballah, Abdelkader
    Bessais, Brahim
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (43)
  • [29] Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation
    O. Zinchuk
    A. Saad
    N. Drozdov
    A. Fedotov
    S. Kobeleva
    A. Mazanik
    A. Patryn
    V. Pilipenko
    A. Pushkarchuk
    [J]. Journal of Materials Science: Materials in Electronics, 2008, 19 : 273 - 276
  • [30] Electrochemical characterization of alloy segregation in the near-surface deformed layer of welded zones of an Al-Cu-Li alloy using scanning electrochemical microscopy
    da Silva, Rejane Maria P.
    Izquierdo, Javier
    Milagre, Mariana X.
    Araujo, Joao Victor de S.
    Antunes, Renato A.
    Souto, Ricardo M.
    Costa, Isolda
    [J]. ELECTROCHIMICA ACTA, 2022, 427
123