CHARACTERIZATION OF DAMAGED LAYER USING AC SURFACE PHOTOVOLTAGE IN SILICON-WAFERS

被引：1

作者：

SHIMIZU, H ^{[1
]}

MUNAKATA, C ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期

关键词：

SILICON WAFER; DAMAGED LAYER; ALUMINUM; RCA RINSE; AC SURFACE PHOTOVOLTAGE; SCANNING PHOTON MICROSCOPE;

D O I：

10.1143/JJAP.32.3780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AC surface photovoltage (SPV) responds to damaged layers in n-type silicon (Si) wafers with depleted or inverted surfaces. Excited carriers recombine at broken bonds in a damaged layer, and the ac SPV is then reduced depending on whether slight or heavy damage exists at the Si surface. The ac SPV is related to the thermally modulated reflectance signal and, thus, is qualitatively applicable to nondestructive evaluation of the damaged layer.

引用

页码：3780 / 3781

页数：2

共 30 条

[1] NONDESTRUCTIVE CHARACTERIZATION OF SURFACE CONTAMINANTS IN SILICON-WAFERS USING AC SURFACE PHOTOVOLTAGE METHOD
SHIMIZU, H
MUNAKATA, C
MATERIALS TRANSACTIONS JIM, 1994, 35 (11): : 827 - 832
[2] CONFIRMATION OF ALUMINUM-INDUCED NEGATIVE CHARGE IN THERMALLY OXIDIZED SILICON-WAFERS USING AC SURFACE PHOTOVOLTAGE METHOD
SHIMIZU, H
MUNAKATA, C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A): : 3335 - 3338
[3] NONDESTRUCTIVE DIAGNOSTIC METHOD USING AC SURFACE PHOTOVOLTAGE IN SILICON-WAFERS RINSED WITH METAL-CONTAMINATED WATER SOLUTIONS
SHIMIZU, H
MUNAKATA, C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9A): : 3775 - 3779
[4] EFFECT OF ALUMINUM ON AC SURFACE PHOTOVOLTAGES IN THERMALLY OXIDIZED N-TYPE SILICON-WAFERS
SHIMIZU, H
MUNAKATA, C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03): : 729 - 731
[5] AC PHOTOVOLTAIC IMAGES OF THERMALLY OXIDIZED P-TYPE SILICON-WAFERS CONTAMINATED WITH METALS
SHIMIZU, H
MUNAKATA, C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (08): : 2319 - 2321
[6] Monitoring of ultra-trace contaminants on silicon wafers for ULSI by a novel impurity extraction and AC surface photovoltage methods
Shimizu, H
Ishiwari, S
Munakata, C
MATERIALS TRANSACTIONS JIM, 1997, 38 (04): : 319 - 325
[7] Barrier-type AC surface photovoltage in silicon with a copper-contaminated surface
Shimizu, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (10): : 5976 - 5977
[8] Overview on basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques
Shimizu, H
Munakata, C
IN-LINE CHARACTERIZATION TECHNIQUES FOR PERFORMANCE AND YIELD ENHANCEMENT IN MICROELECTRONIC MANUFACTURING II, 1998, 3509 : 96 - 105
[9] Quantitative estimation of the metal-induced negative oxide charge density in n-type silicon wafers from measurements of frequency-dependent AC surface photovoltage
Shimizu, H
Shin, R
Ikeda, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A): : 1471 - 1476
[10] DETECTION AND IMAGING OF SUBSURFACE MICROCRACKS IN SILICON-WAFERS USING PHOTOACOUSTIC MICROSCOPE
NAKATA, T
KEMBO, Y
KITAMORI, T
SAWADA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 : 146 - 148

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