DIELECTRIC-PROPERTIES OF REACTIVELY SPUTTERED GALLIUM NITRIDE FILMS

被引:13
作者
LAKSHMI, E
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D O I
10.1016/0040-6090(81)90597-6
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:L137 / L139
页数:3
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HARIU, T ;
USUBA, T ;
ADACHI, H ;
SHIBATA, Y .
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[2]   THE GROWTH OF HIGHLY RESISTIVE GALLIUM NITRIDE FILMS [J].
LAKSHMI, E ;
MATHUR, B ;
BHATTACHARYA, AB ;
BHARGAVA, VP .
THIN SOLID FILMS, 1980, 74 (01) :77-82
[3]   EFFECT OF NATIVE OXIDE ON INTERFACE PROPERTY OF GAAS MIS STRUCTURES [J].
SUZUKI, N ;
HARIU, T ;
SHIBATA, Y .
APPLIED PHYSICS LETTERS, 1978, 33 (08) :761-762