GROWTH AND PROPERTIES OF ALGAAS/GAAS HETEROSTRUCTURES ON GAAS (110) SURFACE

被引：21
作者：
ZHOU, JM
HUANG, Y
LI, YK
JIA, WY
机构：
[1] Chinese Acad of Sciences, Beijing, China, Chinese Acad of Sciences, Beijing, China
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
Semiconducting aluminum compounds - SEMICONDUCTOR DEVICES - Heterojunctions;
D O I：
10.1016/0022-0248(87)90394-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on MBE growth of high quality modulation doped heterostructures on GaAs (110) without intentional misorientation. PL measurements have shown that a high quality (110) 2DEG system was obtained. Quantum Hall effect measurements and mobility enhancement results show that the AlGaAs/GaAs(110) interface displays the same two-dimensional electron gas characteristics as the AlGaAs/GaAs (100) interface.
引用
收藏
页码：221 / 223
页数：3
相关论文
共 9 条
[1]   RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343
[2]   CRYSTAL ORIENTATION DEPENDENCE OF SILICON AUTOCOMPENSATION IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J].
BALLINGALL, JM ;
WOOD, CEC .
APPLIED PHYSICS LETTERS, 1982, 41 (10) :947-949
[3]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[4]  
FUCHS J, 1984, B AM PHYS SOC, V29, P233
[5]   POLAR HETEROJUNCTION INTERFACES [J].
HARRISON, WA ;
KRAUT, EA ;
WALDROP, JR ;
GRANT, RW .
PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410
[6]  
HUANG YY, IN PRESS
[7]   ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J].
KROEMER, H ;
POLASKO, KJ ;
WRIGHT, SC .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :763-765
[8]   BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS [J].
PEARSALL, T ;
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA ;
CHELIKOWSKY, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :297-302
[9]   MONO-LAYER AND BI-LAYER SUPERLATTICES OF GAAS AND ALAS [J].
SANO, N ;
KATO, H ;
NAKAYAMA, M ;
CHIKA, S ;
TERAUCHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L640-L641
1