INTERCONNECTION AND ELECTROMIGRATION SCALING THEORY

被引：58
作者：
GARDNER, DS
MEINDL, JD
SARASWAT, KC
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期
关键词：
D O I：
10.1109/T-ED.1987.22974
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：633 / 643
页数：11
相关论文
共 46 条
[1]   OPTIMAL INTERCONNECTION CIRCUITS FOR VLSI [J].
BAKOGLU, HB ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :903-909
[2]  
BAKOGLU HB, 1985, MAY S VLSI TECHN, P54
[3]  
BHATT HJ, 1970, OCT IEDM, P48
[4]   ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].
BLACK, JR .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&
[5]   ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J].
BLACK, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :338-&
[6]   ELECTROMIGRATION-INDUCED FAILURES IN, AND MICROSTRUCTURE AND RESISTIVITY OF, SPUTTERED GOLD FILMS [J].
BLAIR, JC ;
GHATE, PB ;
FULLER, CR ;
HAYWOOD, CT .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :307-&
[7]   MEASUREMENT OF STRESS GRADIENTS GENERATED BY ELECTROMIGRATION [J].
BLECH, IA ;
TAI, KL .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :387-389
[8]   ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].
BLECH, IA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1203-1208
[9]  
Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295
[10]   ANODIZATION OF ALUMINUM TO INHIBIT HILLOCK GROWTH DURING HIGH TEMPERATURE PROCESSING [J].
DELLOCA, CJ ;
LEARN, AJ .
THIN SOLID FILMS, 1971, 8 (05) :R47-&
12345