CHEMICAL-VAPOR-DEPOSITION OF PB1-XLAXTIO3

被引：2

作者：

VANBUSKIRK, PC ^{[1
]}

ROEDER, J ^{[1
]}

BILODEAU, S ^{[1
]}

POMBRIK, S ^{[1
]}

BERATAN, H ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75243

来源：

INTEGRATED FERROELECTRICS | 1995年 / 6卷 / 1-4期

关键词：

D O I：

10.1080/10584589508019360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report chemical vapor deposition (CVD) of PbLaTiO3 films for integrated pyroelectric devices. Pb(thd)(2), La(thd)(3) and Ti(O-Pr)(2)(thd)(2) were introduced to the reactor via a single liquid precursor solution that is vaporized. Substrate temperatures were approximately 535 degrees C and post deposition annealing was not used. Films were deposited on fused silica and Pt metallized Si substrates. The liquid delivery technique permitted excellent composition control and films on fused silica were predominantly [100] oriented with trace amounts of [110] and [111] present. Pyroelectricity for 0.7 mu m thick films deposited on Pt metallized Si was measured using a modified Byer-Roundi technique and pyroelectric coefficients as high as 90 nC/cm(2) . K were observed. The high crystalline quality and pyroelectric properties are attributed to the excellent composition control afforded by the liquid delivery CVD technique.

引用

页码：141 / 153

页数：13

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