CHEMICAL-VAPOR-DEPOSITION OF PB1-XLAXTIO3

We report chemical vapor deposition (CVD) of PbLaTiO3 films for integrated pyroelectric devices. Pb(thd)(2), La(thd)(3) and Ti(O-Pr)(2)(thd)(2) were introduced to the reactor via a single liquid precursor solution that is vaporized. Substrate temperatures were approximately 535 degrees C and post deposition annealing was not used. Films were deposited on fused silica and Pt metallized Si substrates. The liquid delivery technique permitted excellent composition control and films on fused silica were predominantly [100] oriented with trace amounts of [110] and [111] present. Pyroelectricity for 0.7 mu m thick films deposited on Pt metallized Si was measured using a modified Byer-Roundi technique and pyroelectric coefficients as high as 90 nC/cm(2) . K were observed. The high crystalline quality and pyroelectric properties are attributed to the excellent composition control afforded by the liquid delivery CVD technique.