ULTRA FAST NON BOLOMETRIC PHOTORESPONSE OF YBa2Cu3O7-x THIN FILMS

被引：18

作者：

Ghis, A. ^{[1
]}

Pfister, S. ^{[1
]}

Villegier, J. C. ^{[1
]}

Nail, M. ^{[2
]}

Maneval, J. P. ^{[3
]}

机构：

[1] LETI CEA Technol Avancees, DOPT SCMM CENG 85X, F-38041 Grenoble, France

[2] CEA DAM, Ctr Etud Limeil Valenton, F-91195 Villeneuve St Georges, France

[3] Ecole Normale Super, LPMC, 24 Rue Lhomond, F-75231 Paris 5, France

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233924

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra fast transient voltage (<12ps risetime 30ps width) has been measured on a current biased very thin (30nm) YBa2C3O7-x epitaxial film, when illuminated by picosecond laser pulse (lambda = 1.06 mu m) at -50K. The experimental set-up and the measuring apparatus allowed precise time measurements. The narrow and high electric pulse obtained is faster than any previously reported. It is attributed to non equilibrium Cooper pair breaking process. This first response pulse is followed by a longer bolometric decay that will be interpreted using parameters obtained from measures taken at smaller fluence and lower temperature, as the combination of a phonon escape time and an electron phonon energy relaxation time.

引用

页码：2136 / 2139

页数：4

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