THE INFLUENCE OF THERMAL POINT-DEFECTS ON THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON-CRYSTALS

被引：50
作者：
DEKOCK, AJR
VANDEWIJGERT, WM
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期
关键词：
D O I：
10.1063/1.92217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：888 / 890
页数：3
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