MEMORY BEHAVIOR OF THIN-FILM ELECTROLUMINESCENT DEVICES

被引：8

|

作者：

ALT, PM ^{[1
]}

HOWARD, WE ^{[1
]}

SAHNI, O ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期

关键词：

D O I：

10.1109/T-ED.1979.19763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1850 / 1850

页数：1

相关论文

共 50 条

[1] THIN-FILM ELECTROLUMINESCENT DEVICES WITH MEMORY
SAHNI, O
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 386 : 49 - 57
[2] MEMORY IN THIN-FILM ELECTROLUMINESCENT DEVICES
HOWARD, WE
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) : 155 - 173
[3] ON THE EFFICIENCY OF THIN-FILM ELECTROLUMINESCENT DEVICES
MULLER, GO
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 139 (01): : 263 - 269
[4] MEASURING ON THIN-FILM ELECTROLUMINESCENT DEVICES
MULLER, GO
MACH, R
SELLE, B
SCHULZ, G
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (02): : 657 - 669
[5] MEASURING ON THIN-FILM ELECTROLUMINESCENT DEVICES
MULLER, GO
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 139 (01): : 271 - 278
[6] APPLICATION OF THIN-FILM ELECTROLUMINESCENT DEVICES
THEIS, D
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) : 191 - 207
[7] OPTICAL SWITCHING IN THIN-FILM ELECTROLUMINESCENT DEVICES WITH INHERENT MEMORY CHARACTERISTICS
SAHNI, O
HOWARD, WE
ALT, PM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 459 - 465
[8] ELECTRICAL CONTROL OF THE HYSTERESIS BEHAVIOR IN AC THIN-FILM ELECTROLUMINESCENT DEVICES
YANG, KWC
OWEN, SJT
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C115 - C115
[9] SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF THIN-FILM ELECTROLUMINESCENT DEVICES
NEYTS, KA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2604 - 2611
[10] ANALYTICAL MODEL FOR THIN-FILM ELECTROLUMINESCENT DEVICES
NEYTS, KA
DEVISSCHERE, P
JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4163 - 4171

← 1 2 3 4 5 →