PLASMA PARAMETER AND ETCH MEASUREMENTS IN A MULTIPOLAR CONFINED ELECTRON-CYCLOTRON RESONANCE DISCHARGE

被引:19
作者
MANTEI, TD
RYLE, TE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 01期
关键词
D O I
10.1116/1.585786
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A multipolar confined electron cyclotron resonance discharge has been characterized by plasma parameter and etch measurements in Ar and SF6. Positive ion densities of 10(11) cm-3 or greater are obtained at pressures of 0.1-1.0 mTorr with 400-600 W input microwave power. The positive ion current density uniformity across a 16 cm diam is +/- 4% at 1.0 mTorr. Silicon etch rates of 0.25-1.25-mu-m/min are obtained with 0.1-1.0 mTorr of SF6, with -60 V substrate bias.
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页码:29 / 33
页数:5
相关论文
共 17 条
[1]  
BURKE RR, 1988, SOLID STATE TECH FEB, P67
[2]  
CHEN F, 1974, INTRO PLASMA PHYSICS
[3]  
Franklin RN., 1976, PLASMA PHENOMENA GAS
[4]  
FUJIWARA N, UNPUB P S DRY PROCES
[5]   EXPERIMENTAL CONDITIONS FOR UNIFORM ANISOTROPIC ETCHING OF SILICON WITH A MICROWAVE ELECTRON-CYCLOTRON RESONANCE PLASMA SYSTEM [J].
HOPWOOD, J ;
REINHARD, DK ;
ASMUSSEN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1896-1899
[6]   PLASMA-ETCHING WITH A MICROWAVE CAVITY PLASMA DISK SOURCE [J].
HOPWOOD, J ;
DAHIMENE, M ;
REINHARD, DK ;
ASMUSSEN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :268-271
[7]  
Laframboise J. G., 1966, 100 U TOR I AER STUD
[8]   MAGNETIC MULTIPOLE CONTAINMENT OF LARGE UNIFORM COLLISIONLESS QUIESCENT PLASMAS [J].
LIMPAECHER, R ;
MACKENZIE, KR .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) :726-731
[9]   REACTIVE ION-BEAM ETCHING USING A BROAD BEAM ECR ION-SOURCE [J].
MATSUO, S ;
ADACHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (01) :L4-L6
[10]   SF6 PLASMA-ETCHING OF SILICON - EVIDENCE OF SEQUENTIAL MULTILAYER FLUORINE ADSORPTION [J].
PELLETIER, J ;
ARNAL, Y ;
DURANDET, A .
EUROPHYSICS LETTERS, 1987, 4 (09) :1049-1054