MODELING OF AN INVERSION BASE BIPOLAR-TRANSISTOR

被引：0

作者：

MEYYAPPAN, M

GRUBIN, HL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 01期

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TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 7

页数：7

共 9 条

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[5] NUMERICAL-SIMULATION OF AN ALGAAS GAAS BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR [J].

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[6]

MEYYAPPAN M, 1987, R8791002213 WRIGHTP

[7]

MEYYAPPAN M, IN PRESS SOLID STATE

[8] THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES [J].

TAYLOR, GW ;

SIMMONS, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2345-2367

[9] VALENCE BAND OFFSET IN ALAS/GAAS HETEROJUNCTIONS AND THE EMPIRICAL RELATION FOR BAND ALIGNMENT [J].

WANG, WI ;

STERN, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1280-1284

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