EFFECT OF BULK INVERSION ASYMMETRY ON [001], [110], AND [111] GAAS/ALAS QUANTUM WELLS

被引:139
作者
EPPENGA, R
SCHUURMANS, MFH
机构
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 18期
关键词
D O I
10.1103/PhysRevB.37.10923
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:10923 / 10926
页数:4
相关论文
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[1]   CALCULATIONS OF HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS AND SUPERLATTICES [J].
ALTARELLI, M ;
EKENBERG, U ;
FASOLINO, A .
PHYSICAL REVIEW B, 1985, 32 (08) :5138-5143
[2]   ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SUPER-LATTICES [J].
ALTARELLI, M .
PHYSICA B & C, 1983, 117 (MAR) :747-749
[3]   ELECTRONIC-STRUCTURE OF TWO-DIMENSIONAL SEMICONDUCTOR SYSTEMS [J].
ALTARELLI, M .
JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) :472-487
[4]   SPONTANEOUS SPIN POLARIZATION OF PHOTOELECTRONS FROM GAAS [J].
ALVARADO, SF ;
RIECHERT, H ;
CHRISTENSEN, NE .
PHYSICAL REVIEW LETTERS, 1985, 55 (24) :2716-2718
[5]   SELF-CONSISTENT CALCULATIONS OF ELECTRIC SUBBANDS IN P-TYPE GAALAS-GAAS HETEROJUNCTIONS [J].
BANGERT, E ;
LANDWEHR, G .
SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) :363-368
[6]   EFFECTIVE MASSES OF HOLES AT GAAS-ALGAAS HETEROJUNCTIONS [J].
BROIDO, DA ;
SHAM, LJ .
PHYSICAL REVIEW B, 1985, 31 (02) :888-892
[7]   TERMS LINEAR IN K IN THE BAND-STRUCTURE OF ZINCBLENDE TYPE SEMICONDUCTORS [J].
CARDONA, M ;
CHRISTENSEN, NE ;
FASOL, G .
PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2831-2833
[8]   SPLITTING OF THE CONDUCTION BANDS OF GAAS FOR K ALONG [110] [J].
CHRISTENSEN, NE ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1984, 51 (07) :491-493
[9]   EFFECT OF INVERSION SYMMETRY ON THE BAND-STRUCTURE OF SEMICONDUCTOR HETEROSTRUCTURES [J].
EISENSTEIN, JP ;
STORMER, HL ;
NARAYANAMURTI, V ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1984, 53 (27) :2579-2582
[10]   CALCULATION OF HOLE SUBBANDS AT THE GAAS-ALXGA1-XAS INTERFACE [J].
EKENBERG, U ;
ALTARELLI, M .
PHYSICAL REVIEW B, 1984, 30 (06) :3569-3570