ENERGY SPECTRUM OF GALLIUM ARSENIDE DOPED WITH SILICON

[1] Alferov Zh. I., 1968, Fizika Tverdogo Tela, V10, P2861

[2] ELISEEV PG, 1968, SOV PHYS SEMICOND+, V2, P1

[3] ELISEEV PG, 1968, FIZ TEKH POLUPROV, V2, P3

[4] PHOTOLUMINESCENCE OF SILICON-COMPENSATED GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2909 - &

[5] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 221 - +

[6] WHELAN JM, 1960, P INT C SEMICONDUCTO, P943

[7] WILLIAMS EW, 1967, T METALL SOC AIME, V239, P387

[1] Alferov Zh. I., 1968, Fizika Tverdogo Tela, V10, P2861

[2] ELISEEV PG, 1968, SOV PHYS SEMICOND+, V2, P1

[3] ELISEEV PG, 1968, FIZ TEKH POLUPROV, V2, P3

[4] PHOTOLUMINESCENCE OF SILICON-COMPENSATED GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2909 - &

[5] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 221 - +

[6] WHELAN JM, 1960, P INT C SEMICONDUCTO, P943

[7] WILLIAMS EW, 1967, T METALL SOC AIME, V239, P387