RING-GEOMETRY IMPATT OSCILLATOR DIODES

被引：12

作者：

MARINACC.LP

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 09期

关键词：

D O I：

10.1109/PROC.1968.6650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ring-geometry IMPATT diodes have been developed which give 1.15 watts output power at 8.4 to 10 GHz, compared with 0.87 watt obtained from solid-circular-geometry diodes of the same basic design. The improved performance is due to better thermal dissipation in the ring structure. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1588 / +

页数：1