SUMMATION OF GAUSSIANS FOR IONIMPLANTATION PROFILE CONTROL

被引：9

作者：

ALLEN, RM

机构：

[1] Services Electronics Research Laboratory Baldock, Herts.

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 06期

关键词：

D O I：

10.1049/el:19690084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conditions are given under which ions of a single energy produce doping profiles close to Gaussian. Methods of Gaussian summation are discussed. A computer program is described which selects optimum energies for fit to predetermined profiles. Energy-dose data are given for a uniform profile of various dopants in silicon. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：111 / &

共 4 条

[1] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J].

DEARNALEY, G ;

FREEMAN, JH ;

GARD, GA ;

WILKINS, MA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :587-+

[2] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :295-+

[3] Ion-Implantation Doping of Semiconductors [J].

Large, L. N. ;

Bicknell, R. W. .

JOURNAL OF MATERIALS SCIENCE, 1967, 2 (06) :589-609

[4]

Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

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