MICROCAVITY GAALAS/GAAS SURFACE-EMITTING LASER WITH ITH=6MA

被引：75
作者：
IGA, K
KINOSHITA, S
KOYAMA, F
机构：
[1] Tokyo Inst of Technology, Yokohama, Jpn, Tokyo Inst of Technology, Yokohama, Jpn
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 03期
关键词：
D O I：
10.1049/el:19870095
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
5
引用
收藏
页码：134 / 136
页数：3
相关论文
共 5 条
[1]   A TRIAL FABRICATION OF CIRCULAR BURIED HETEROSTRUCTURE (CBH) GAALAS/GAAS SURFACE EMITTING LASER BY USING SELECTIVE MELTBACK METHOD [J].
KINOSHITA, S ;
ODAGAWA, T ;
IGA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (08) :1264-1265
[2]  
KINOSHITA S, 1986, 6TH P C LAS EL SAN F, P282
[3]  
KINOSHITA S, 1986, 10TH P IEEE INT SEM, P106
[4]   SELECTIVE MELTBACKED SUBSTRATE INNER-STRIPE ALGAAS/GAAS LASERS OPERATED UNDER ROOM-TEMPERATURE CW CONDITION [J].
KISHINO, K ;
KINOSHITA, S ;
KONNO, S ;
TAKO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L473-L475
[5]   GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE [J].
UCHIYAMA, S ;
IGA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) :1117-1118
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