INFLUENCE OF THE FLUX-DENSITY ON THE RADIATION-DAMAGE OF BIPOLAR SILICON TRANSISTORS BY PROTONS AND ELECTRONS

被引：0
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作者：
BANNIKOV, YA
GORIN, BM
KOZHEVNIKOV, VP
MIKHNOVICH, VV
GUSEV, LI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 11期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1289 / 1292
页数：4
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