IMPURITY ABSORPTION-SPECTRA OF COMPENSATED INSB

被引：0

作者：

VALYASHKO, EG ^{[1
]}

PLESKACHEVA, TB ^{[1
]}

机构：

[1] MV LOMONOSOV STATE UNIV, MOSCOW, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 7卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：573 / 574

页数：2

共 17 条

[1]

ABDUVAKHIDOV KM, 1967, SOV PHYS SEMICOND+, V1, P788

[2]

ABDUVAKHIDOV KM, 1967, FIZ TEKH POLUPROV, V1, P945

[3] INDIRECT TRANSITIONS AT THE CENTER OF THE BRILLOUIN ZONE WITH APPLICATION TO INSB, AND A POSSIBLE NEW EFFECT [J].

DUMKE, WP .

PHYSICAL REVIEW, 1957, 108 (06) :1419-1425

[4] RECOVERY OF ELECTRON RADIATION DAMAGE IN N-TYPE INSB [J].

EISEN, FH .

PHYSICAL REVIEW, 1961, 123 (03) :736-&

[5] OSCILLATORY PHOTOCONDUCTIVITY IN INSB [J].

ENGELER, W ;

LEVINSTEIN, H ;

STANNARD, C .

PHYSICAL REVIEW LETTERS, 1961, 7 (02) :62-&

[6] PHOTOCONDUCTIVITY IN P-TYPE INDIUM ANTIMONIDE WITH DEEP ACCEPTOR IMPURITIES [J].

ENGELER, W ;

LEVINSTEIN, H ;

STANNARD, C .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :249-254

[7]

Galavanov V. V., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P284

[8]

GALAVANOV VV, 1969, SOV PHYS SEMICOND+, V3, P238

[9] RECOMBINATION CENTERS IN INSB [J].

HOLLIS, JEL ;

CHOO, SC ;

HEASELL, EL .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1626-&

[10]

ISMAILOV IM, 1968, SOV PHYS SEMICOND+, V2, P754

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