MICROSTRUCTURE AND PROPERTIES OF RF-SPUTTERED AMORPHOUS HYDROGENATED SILICON FILMS

被引：119
作者：
ROSS, RC
MESSIER, R
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期
关键词：
D O I：
10.1063/1.329391
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：5329 / 5339
页数：11
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共 57 条
[1]   TEMPERATURE-DEPENDENCE OF THE CHARACTERISTICS OF SPUTTERED A-SI-H SOLAR-CELLS [J].
ALKAISI, MM ;
THOMPSON, MJ .
SOLAR CELLS, 1979, 1 (01) :91-98
[2]  
ANDERSON DA, 1979, PHYS REV LETT, V41, P1492
[3]  
AYUKHANOV AK, 1966, B ACAD SCI USSR, V30, P2083
[4]  
BIEGELSEN DK, 1978, PHILOS MAG B, V37, P477, DOI 10.1080/01418637808225791
[5]   HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].
BIEGELSEN, DK ;
STREET, RA ;
TSAI, CC ;
KNIGHTS, JC .
PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846
[6]   CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J].
BRENNER, A ;
SENDEROFF, S .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02) :105-123
[7]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[8]   QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].
BRODSKY, MH ;
FRISCH, MA ;
ZIEGLER, JF ;
LANFORD, WA .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563
[9]  
BRUYERE JC, 1980, J APPL PHYS, V51, P2199, DOI 10.1063/1.327895
[10]  
CARLSON DE, 1980, SERI PRO82543 REP
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