ELECTRON-LO-PHONON SCATTERING RATES IN GAAS-ALXGA1-XAS QUANTUM-WELLS

被引：44
|
作者：
WEBER, G
DEPAULA, AM
RYAN, JF
机构：
[1] Clarendon Lab., Oxford Univ.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 05期
关键词：
D O I：
10.1088/0268-1242/6/5/015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We calculate the electron-LO-phonon scattering rates for confined phonon modes associated to intrasubband and intersubband transitions for GaAs-Al(x)Ga(1-x)As quantum wells with finite depth. The Huang and Zhu approximation for the confined LO phonon modes, based on a microscopic lattice-dynamic approach, is used and the results are compared with corresponding calculations for infinitely deep quantum wells and some experimental results. We found a remarkably good agreement with the experimental results.
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页码：397 / 400
页数：4
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