EFFECT OF THE LANDAU-LEVEL BROADENING ON THE QUANTUM HALL CONDUCTANCE

被引：0

作者：

KLIROS, GS

机构：

[1] Department of Physics, University of Warwick, Coventry

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1991年 / 13卷 / 01期

关键词：

D O I：

10.1007/BF02451277

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In a previous paper, Kliros et al. presented a model calculation of the Hall conductivity as a function of the Landau level broadening GAMMA for finite temperatures. In this paper, the effect of Landau-level broadening on the structure of the Hall conductivity is investigated. The experimental data regarding the Si-MOSFET and GaAs-heterostructure experiments are reproduced including a functional dependence of GAMMA on the magnetic field. The influence of the effective g-factor is considered as well.

引用

页码：99 / 104

页数：6

共 15 条

[11] ELECTRON-STATES IN GAAS/GA1-XALXAS HETEROSTRUCTURES - SUBBAND LANDAU-LEVELS [J].