STRESS-INDUCED LAYER-BY-LAYER GROWTH OF GE ON SI(100)

被引：142

作者：

TERSOFF, J

机构：

[1] IBM Research Division, Thomas J. Watson Reserach Center, Yorktown Heights

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.43.9377

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several experiments have found that Ge initially grows layer by layer on the Si(100)2 x 1 surface, up to a thickness of 3 atomic layers. Further growth occurs via islands. Here, model calculations show that layer-by-layer growth is stabilized for up to 3 layers because it reduces the strain energy associated with the surface dimerization.

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页码：9377 / 9380

页数：4

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