INFLUENCE OF THE INTERFACE SPACING ON THE INTERFACE STATES IN HETEROJUNCTIONS BETWEEN MONATOMIC SEMICONDUCTORS

被引：0
|
作者：
KANDILAROV, BD
DETCHEVA, V
PRIMATAROWA, MT
机构：
[1] UNIV SOFIA,DEPT SOLID STATE PHYS,BU-1126 SOFIA,BULGARIA
[2] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BU-1113 SOFIA,BULGARIA
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 16期
关键词：
D O I：
10.1088/0022-3719/12/16/028
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of small and moderate deformations of the interface spacing on the existence of interface states is discussed on the basis of a generalised one-dimensional model and by using a scattering theoretical method. The method applies equally well to both shrinkage and dilatation of the interface spacing and covers all examples from the ideal undeformed heterojunction to the extreme deformation discussed recently. The essential conditions for the existence of interface states are derived and the numerical analysis performed is used to examine several interesting examples.
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页码：3401 / 3408
页数：8
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