PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE

被引：16

作者：

BYKER, HJ

WOOD, VE

AUSTIN, AE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 09期

关键词：

D O I：

10.1149/1.2124336

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1982 / 1987

页数：6

共 19 条

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[4] CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS [J].

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