STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS

被引：18
作者：
FENG, M
KWOK, SP
EU, V
HENDERSON, BW
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 04期
关键词：
D O I：
10.1063/1.329042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2990 / 2993
页数：4
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