SCANNING SCANIIR (SURFACE-COMPOSITION ANALYSIS BY NEUTRAL AND ION IMPACT RADIATION) MICROSCOPE

被引：4

作者：

INOUE, M

KUNITOMO, S

NISHIGAKI, S

NODA, T

机构：

[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, 440, Tempaku-cho

[2] Department of Applied Physics, Osaka University, Suita, Osaka

[3] Toyohashi Junior College, Toyohashi, 440, Ushikawa-cho

[4] Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya, 464-01, Furo-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2B期

关键词：

SCANIIR; SIMS; MICROANALYSIS; ION BEAM; SCANNING MICROSCOPE; INSULATOR; CHARGE-UP;

D O I：

10.1143/JJAP.31.L200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A scanning SCANIIR (surface composition analysis by neutral and ion impact radiation) microscope for lateral and in-depth composition analysis of insulators has been developed, employing a photon counting technique with a ratemeter. The spatial resolution of this system was estimated to be about 30-mu-m by observing Cu(I) 324.8-nm photon images of a 200-mesh circular-type Cu grid. The depth profile of a SiO2/Si interface was depicted using a Si(I) 288.2-nm photon, which yields in-depth resolution of approximately 40 nm.

引用

页码：L200 / L202

页数：3

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