<<Self-organized>> InAs/GaAs quantum dots.

被引：5

作者：

Marzin, JY

Gerard, JM

Cabrol, O

Jusserand, B

Sermage, B

机构：

[1] Laboratoire de Bagneux, France Telecom, PAB, Bagneux Cedex, 92225

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 11-12期

关键词：

D O I：

10.1007/BF02457200

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing mesas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.

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收藏

页码：1285 / 1293

页数：9

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