COMPUTER-SIMULATION OF ION-IMPLANTATION IN AMORPHOUS TARGETS

被引:0
作者
HAGGMARK, LG [1 ]
机构
[1] SANDIA NATL LAB,DIV THEORET,LIVERMORE,CA 94550
来源
JOURNAL OF METALS | 1981年 / 33卷 / 09期
关键词
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:A9 / A9
页数:1
相关论文
共 50 条
[21]   DEFECTS IN AMORPHOUS FERROMAGNETS - EFFECTS OF ION-IMPLANTATION [J].
GAROCHE, P ;
GAMBINO, RJ .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :3520-3522
[22]   DETAILED COMPUTER-SIMULATION OF DAMAGE ACCUMULATION IN ION IRRADIATED CRYSTALLINE TARGETS [J].
JARAIZ, M ;
ARIAS, J ;
BAILON, LA ;
BARBOLLA, JJ .
VACUUM, 1993, 44 (3-4) :321-323
[23]   ION-IMPLANTATION IN AMORPHOUS-GERMANIUM AND SILICON [J].
SEKHAR, P ;
JOSHI, MC ;
NARASIMHAN, KL ;
GUHA, S .
SOLID STATE COMMUNICATIONS, 1978, 26 (12) :933-936
[24]   ION-IMPLANTATION IN TETRAHEDRAL AMORPHOUS-CARBON [J].
MCCULLOCH, DG ;
GERSTNER, EG ;
MCKENZIE, DR ;
PRAWER, S ;
KALISH, R .
PHYSICAL REVIEW B, 1995, 52 (02) :850-857
[25]   Ion-implantation into amorphous hydrogenated carbon films [J].
Khan, RUA ;
Anguita, JV ;
Silva, SRP .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 276 (1-3) :201-205
[26]   ION-IMPLANTATION DISTRIBUTIONS IN CRYSTALLINE MULTILAYER TARGETS [J].
HAUTALA, M ;
KOPONEN, I .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 28 (02) :237-241
[27]   AN EXPERIMENTAL AND COMPUTER-SIMULATION STUDY OF THE PROCESS OF BURIED SIO2 LAYER FORMATION AFTER OXYGEN ION-IMPLANTATION INTO SILICON [J].
YANKOV, RA ;
CHAKAROV, IR ;
WILSON, IH .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 115 (1-3) :157-171
[28]   COMPUTER-SIMULATION OF AMORPHOUS AND CRYSTALLINE SURFACES [J].
MRUZIK, MR ;
GAROFALINI, SH ;
POUND, GM .
JOURNAL OF METALS, 1979, 31 (12) :134-134
[29]   A COMPUTER-SIMULATION OF AMORPHOUS-SILICON [J].
DERELI, G ;
YALABIK, MC ;
ELLIALTIOGLU, S .
PHYSICA SCRIPTA, 1989, 40 (01) :117-121
[30]   COMPUTER-SIMULATION OF DEFECTS IN AMORPHOUS SOLIDS [J].
CHAUDHARI, P .
JOURNAL OF METALS, 1980, 32 (08) :36-37