ACCUMULATION OF RADIATIVE RECOMBINATION CENTERS IN SILICON DUE TO HIGH-TEMPERATURE ELECTRON-IRRADIATION

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作者：
SAFRONOV, LN
SMIRNOV, LS
TISHKOVSKII, EG
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 01期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：67 / 70
页数：4
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