DISORDER-ENHANCED AUGER RECOMBINATION IN III-V ALLOYS

被引：33
作者：
TAKESHIMA, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 12期
关键词：
D O I：
10.1063/1.324533
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：6118 / 6124
页数：7
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共 24 条
[1]  
[Anonymous], 1966, SEMICONDUCTORS SEMIM
[2]   OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].
ANTONCIK, E ;
LANDSBERG, PT .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527) :337-&
[3]   AUGER-LIMITED CARRIER LIFETIMES IN HGCDTE AT HIGH EXCESS CARRIER CONCENTRATIONS [J].
BARTOLI, F ;
ALLEN, R ;
ESTEROWI.L ;
KRUER, M .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2150-2154
[4]  
BEATIE AR, 1967, PHYS STATUS, P577
[5]   AUGER EFFECT IN SEMICONDUCTORS [J].
BEATTIE, AR ;
LANDSBERG, PT .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29
[6]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[7]   AUGER RECOMBINATION IN GAAS AN GASB [J].
BENZ, G ;
CONRADT, R .
PHYSICAL REVIEW B, 1977, 16 (02) :843-855
[8]   EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J].
BEROLO, O ;
WOOLLEY, JC ;
VANVECHT.JA .
PHYSICAL REVIEW B, 1973, 8 (08) :3794-3798
[9]   SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (02) :790-796
[10]   CARRIER LIFETIMES IN EPITAXIAL INAS [J].
DALAL, VL ;
HICINBOTHEM, WA ;
KRESSEL, H .
APPLIED PHYSICS LETTERS, 1974, 24 (04) :184-185
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