GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS

被引：14

作者：

NAKAI, K ^{[1
]}

KITAHARA, K ^{[1
]}

SHIBATOMI, A ^{[1
]}

OHKAWA, S ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI 211,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 10期

关键词：

D O I：

10.1149/1.2133125

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1635 / 1640

页数：6

共 27 条

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[2]

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[3]

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[4]

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[5]

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YOKOYAMA, N ;

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[7] DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS [J].

GOTO, G ;

YANAGISAWA, S ;

WADA, O ;

TAKANASHI, H .

APPLIED PHYSICS LETTERS, 1973, 23 (03) :150-151

[8] ON TEMPERATURE DEPENDENCE OF IRON ACCEPTOR LEVEL IN GAAS1 (RESISTIVITY HALL MOBILITY T/E) [J].

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[9]

HAISTY RW, 1965, 7 P INT C PHYS SEM, P1161

[10]

HEWITT BS, 1976, 6TH INT S GAAS REL C, P24

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