OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON

被引:22
作者
BICHARD, JW
GILES, JC
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D O I
10.1139/p62-156
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1480 / &
相关论文
共 17 条
[1]  
BRUGEL W, 1962, INTRODUCTION INFRARE, P239
[2]  
BRUGEL W, 1962, INTRODUCTION INFRARE, P122
[3]  
DEXTER DL, 1958, SOLID STATE PHYS, V6, P359
[4]   ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (04) :315-317
[5]   ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (2-3) :236-239
[6]  
HROSTOWSKI HJ, 1958, J PHYS CHEM SOLIDS, V4, P184
[7]   THEORY OF DONOR STATES IN SILICON [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1955, 98 (04) :915-922
[8]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
[9]   THE OPTICAL PROPERTIES OF SEMICONDUCTORS .1. THE REFLECTIVITY OF GERMANIUM SEMICONDUCTORS [J].
LARKHOROVITZ, K ;
MEISSNER, KW .
PHYSICAL REVIEW, 1949, 76 (10) :1530-1530
[10]   BROADENING OF IMPURITY LEVELS IN SILICON [J].
LAX, M ;
BURSTEIN, E .
PHYSICAL REVIEW, 1955, 100 (02) :592-602