PERTURBATION-THEORY OF COVALENT CRYSTALS .3. CALCULATION OF FORMATION AND MIGRATION ENERGIES OF A VACANCY IN SI AND GE

被引:43
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SOMA, T
MORITA, A
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10.1143/JPSJ.32.357
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O4 [物理学];
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0702 ;
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页码:357 / +
页数:1
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[1]   CALCULATION OF THE COHESIVE ENERGY OF ZINCBLENDE [J].
ASANO, S ;
TOMISHIMA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1956, 11 (06) :644-653
[2]  
BELYAEV AD, 1967, UKR FIZ ZH, V13, P654
[3]   NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].
BENNEMAN, KH .
PHYSICAL REVIEW, 1965, 137 (5A) :1497-+
[4]   GENERAL METHOD FOR DETERMINING LATTICE POINT DEFECT CONFIGURATIONS INCLUDING THEIR DEPENDENCE ON ELECTRON REDISTRIBUTION [J].
BENNEMANN, KH .
PHYSICAL REVIEW, 1963, 130 (05) :1757-&
[5]   COVALENT BONDING IN DIAMOND [J].
BENNEMANN, KH .
PHYSICAL REVIEW, 1965, 139 (2A) :A482-+
[6]   DIFFUSION OF NICKEL IN SILICON [J].
BONZEL, HP .
PHYSICA STATUS SOLIDI, 1967, 20 (02) :493-&
[7]   DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS [J].
ELKIN, EL ;
WATKINS, GD .
PHYSICAL REVIEW, 1968, 174 (03) :881-&
[8]   QUENCHED-IN LEVELS IN P-TYPE SILICON [J].
ELSTNER, L ;
KAMPRATH, W .
PHYSICA STATUS SOLIDI, 1967, 22 (02) :541-&
[9]   SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].
FAIRFIEL.JM ;
MASTERS, BJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&
[10]   METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :890-+