DETERMINATION OF DEEP ELECTRON TRAPS IN GAAS BY TIME-RESOLVED CAPACITANCE MEASUREMENT

被引：13
作者：
WADA, O [1 ]
YANAGISAWA, S [1 ]
TAKANASHI, H [1 ]
机构：
[1] FUJITSU LABS LTD,KAWASAKI,JAPAN
来源：
APPLIED PHYSICS | 1977年 / 13卷 / 01期
关键词：
D O I：
10.1007/BF00890712
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5 / 13
页数：9
相关论文
共 26 条
[1]   BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].
BLANC, J ;
WEISBERG, LR ;
BUBE, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&
[2]   PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS [J].
BOIS, D ;
BOULOU, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02) :671-675
[3]   IMPROVED METHOD OF DETERMINING DEEP IMPURITY LEVELS AND PROFILES IN SEMICONDUCTORS [J].
GOTO, G ;
YANAGISAWA, S ;
WADA, O ;
TAKANASHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) :1127-1133
[4]   DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS [J].
GOTO, G ;
YANAGISAWA, S ;
WADA, O ;
TAKANASHI, H .
APPLIED PHYSICS LETTERS, 1973, 23 (03) :150-151
[5]   SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS [J].
GRIMMEISS, HG ;
LEDEBO, LA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2155-2162
[6]   PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS [J].
HAISTY, RW ;
STRATTON, R ;
MEHAL, EW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :829-&
[7]   MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J].
HASEGAWA, F ;
MAJERFELD, A .
ELECTRONICS LETTERS, 1975, 11 (14) :286-288
[8]  
HOWER PL, 1969, 2ND P INT S GAAS DAL, P187
[9]   VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE [J].
IHARA, M ;
DAZAI, K ;
RYUZAN, O .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :528-531
[10]   STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
LANG, DV ;
CHO, AY ;
GOSSARD, AC ;
ILEGEMS, M ;
WIEGMANN, W .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564
123