RESIDUAL ACCEPTOR IMPURITIES IN UNDOPED HIGH-PURITY INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:14
作者
BOSE, SS
SZAFRANEK, I
KIM, MH
STILLMAN, GE
机构
[1] UNIV ILLINOIS,MAT RES LAB,CTR CPD SEMICOND MICROELECTR,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.102702
中图分类号
O59 [应用物理学];
学科分类号
摘要
Zn and an unidentified acceptor species, labeled A1, are the only residual acceptors that have been observed in a wide variety of undoped high-purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in metalorganic chemical vapor deposited InP. However, the longitudinal and transverse optical phonon replicas of the free-exciton recombination occur at the same energy as the donor/conduction band-to-acceptor peaks for C acceptors in low-temperature photoluminescence spectra. Since these replicas are usually present in photoluminescence spectra measured under moderate or high optical excitation, care must be exercised so that these peaks are not misinterpreted as C-related transitions.
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页码:752 / 754
页数:3
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