共 14 条
- [1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +BERGLUND, CN
- [2] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3484 - 3491CASEY, HCCHO, AYLANG, DVNICOLLIAN, EHFOY, PW
- [3] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 828 - 834CHEN, JTCMULLER, RS
- [4] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960DELAGEBEAUDEUF, DLINH, NT
- [5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667DINGLE, RSTORMER, HLGOSSARD, ACWIEGMANN, W
- [6] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR[J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341DRUMMOND, TJMORKOC, HLEE, KSHUR, M
- [7] TEMPERATURE-DEPENDENCE OF AL-UNDOPED AL0.5GA0.5AS/GAAS CAPACITORS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1164 - 1168DRUMMOND, TJFISCHER, RJKOPP, WFARNOLD, DJKLEM, JFMORKOC, HSHUR, MS
- [8] EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5689 - 5690DRUMMOND, TJKOPP, WMORKOC, HHESS, KCHO, AYSTREETMAN, BG
- [10] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L598 - L600MIMURA, TJOSHIN, KHIYAMIZU, SHIKOSAKA, KABE, M